BFR193WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Position :

Dual

Base Part Number :

BFR193

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Power - Max :

580mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Packaging :

Tape and Reel (TR)

Published :

2011

Mounting Type :

Surface Mount

Transition Frequency :

8000MHz

Gain :

10.5dB ~ 16dB

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.58W

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

80mA

Configuration :

Single

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Package / Case :

SC-70, SOT-323

Collector-Base Capacitance-Max :

1pF

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

12V

RoHS Status :

RoHS Compliant

Frequency - Transition :

8GHz