BFR182E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Published :

2005

Number of Elements :

1

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Operating Temperature :

150°C TJ

Configuration :

Single

Frequency - Transition :

8GHz

ECCN Code :

EAR99

Base Part Number :

BFR182

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Pbfree Code :

yes

Power - Max :

250mW

Surface Mount :

yes

Transistor Element Material :

SILICON

Transistor Type :

NPN

Gain :

12dB ~ 18dB

Collector-Base Capacitance-Max :

0.5pF

Current - Collector (Ic) (Max) :

35mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Factory Lead Time :

4 Weeks

Transition Frequency :

8000MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

12V