BFR182E-6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Power Dissipation :

250

RoHS Status :

RoHS Compliant

Collector Current-Max (IC) :

0.035A

JESD-30 Code :

R-PDSO-G3

Operating Temperature (Max) :

150°C

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Reach Compliance Code :

Compliant

Transition Frequency :

8000MHz

Number of Elements :

1

Collector-Emitter Voltage-Max :

12V

JESD-609 Code :

e3

Surface Mount :

yes

Collector-Base Capacitance-Max :

0.5pF

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Terminal Form :

Gull wing

ECCN Code :

EAR99

Configuration :

Single

Transistor Polarity :

NPN

Pbfree Code :

icon-pbfree yes

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Continuous Collector Current :

35