BFR181WH6327XTSA1
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- Mfr.Part #
- BFR181WH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 8GHZ SOT323-3
- Stock
- 124,528
- In Stock ：
- 124,528
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Max Power Dissipation :
- 175mW
- hFE Min :
- 50
- Collector-Base Capacitance-Max :
- 0.45pF
- ECCN Code :
- EAR99
- Test Frequency :
- 900MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Base Part Number :
- BFR181
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 5mA 8V
- Transition Frequency :
- 8000MHz
- Package / Case :
- SC-70, SOT-323
- Configuration :
- Single
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 12V
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Frequency :
- 8GHz
- Number of Elements :
- 1
- Published :
- 2014
- Number of Pins :
- 3
- Noise Figure (dB Typ @ f) :
- 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Power Dissipation :
- 175mW
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Gain :
- 19dB
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 2V
- Max Breakdown Voltage :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 20V
- Factory Lead Time :
- 4 Weeks
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 20mA
- Datasheets
- BFR181WH6327XTSA1
BFR181WH6327XTSA1 Documents
BFR181WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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