BFR181WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Package / Case :

SC-70, SOT-323

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Number of Elements :

1

Max Collector Current :

20mA

Lead Free :

Lead Free

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Factory Lead Time :

4 Weeks

Gain :

19dB

Frequency :

8GHz

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

12V

Number of Terminations :

3

hFE Min :

50

Collector Emitter Breakdown Voltage :

12V

Max Power Dissipation :

175mW

Collector Base Voltage (VCBO) :

20V

Number of Pins :

3

Transistor Application :

AMPLIFIER

Transition Frequency :

8000MHz

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Published :

2014

Power Dissipation :

175mW

Emitter Base Voltage (VEBO) :

2V

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Base Part Number :

BFR181

Max Breakdown Voltage :

12V

Collector-Base Capacitance-Max :

0.45pF

Test Frequency :

900MHz

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Termination :

SMD/SMT

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transistor Type :

NPN