BFR181WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

8000MHz

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Published :

2011

Voltage - Collector Emitter Breakdown (Max) :

12V

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Power - Max :

175mW

Current - Collector (Ic) (Max) :

20mA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Gain :

19dB

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Power Dissipation-Max (Abs) :

0.175W

Frequency - Transition :

8GHz

RoHS Status :

RoHS Compliant

Base Part Number :

BFR181

Collector-Base Capacitance-Max :

0.5pF

Surface Mount :

yes

Polarity/Channel Type :

NPN

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Qualification Status :

Not Qualified