BFQ31ATC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Element Configuration :

Single

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Mount :

Surface Mount

Max Power Dissipation :

330mW

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Gain Bandwidth Product :

600MHz

Qualification Status :

Not Qualified

Length :

3.05mm

Number of Terminations :

3

Terminal Form :

Gull wing

Height :

1mm

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 3mA 1V

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

15V

Collector Base Voltage (VCBO) :

30V

Reach Compliance Code :

Unknown

Weight :

7.994566mg

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Reference Standard :

CECC

Max Collector Current :

100mA

Collector-Base Capacitance-Max :

1.7pF

Operating Temperature :

-55°C~150°C TJ

Current Rating :

100mA

Continuous Collector Current :

100mA

Transition Frequency :

600MHz

Emitter Base Voltage (VEBO) :

3V

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

15V

Voltage - Rated DC :

15V

Transistor Type :

NPN

Width :

1.4mm

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)