BFQ31ATC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Voltage - Rated DC :

15V

Weight :

7.994566mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 3mA 1V

Current Rating :

100mA

Collector Base Voltage (VCBO) :

30V

Transistor Element Material :

SILICON

Height :

1mm

Transistor Type :

NPN

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

15V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.4mm

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Reference Standard :

CECC

Mount :

Surface Mount

Length :

3.05mm

Number of Elements :

1

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G3

Collector Emitter Breakdown Voltage :

15V

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

600MHz

Transition Frequency :

600MHz

Lead Free :

Lead Free

Max Collector Current :

100mA

Max Power Dissipation :

330mW

Continuous Collector Current :

100mA

Emitter Base Voltage (VEBO) :

3V

Collector-Base Capacitance-Max :

1.7pF

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

HTS Code :

8541.21.00.75