BFQ31ATA

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Mfr.Part #
BFQ31ATA
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF TRANS NPN 15V 600MHZ SOT23-3
Stock
29,878
In Stock :
29,878

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - RF
Max Operating Temperature :
150°C
Published :
2012
Voltage - Collector Emitter Breakdown (Max) :
15V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Noise Figure (dB Typ @ f) :
6dB @ 60MHz
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 3mA 1V
Current Rating :
100mA
Operating Temperature :
-55°C~150°C TJ
Length :
3.05mm
Collector Emitter Breakdown Voltage :
15V
Current - Collector (Ic) (Max) :
100mA
Collector Emitter Voltage (VCEO) :
15V
Height :
1mm
Min Operating Temperature :
-55°C
Power - Max :
330mW
Emitter Base Voltage (VEBO) :
3V
RoHS Status :
RoHS Compliant
Width :
1.4mm
Max Collector Current :
100mA
Lead Free :
Lead Free
Polarity :
NPN
Continuous Collector Current :
100mA
Voltage - Rated DC :
15V
Max Power Dissipation :
330mW
Collector Base Voltage (VCBO) :
30V
Weight :
7.994566mg
Frequency - Transition :
600MHz
Mount :
Surface Mount
Gain Bandwidth Product :
600MHz
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SOT-23-3
Mounting Type :
Surface Mount
Introducing Transistors - Bipolar (BJT) - RF Diodes Incorporated BFQ31ATA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, BFQ31ATA pinout, BFQ31ATA datasheet PDF, BFQ31ATA amp .Beyond Transistors - Bipolar (BJT) - RF Diodes Incorporated BFQ31ATA ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated BFQ31ATA


BFQ31ATA datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Diodes Incorporated stock available at

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