BFP840FESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Contact Plating :

Tin

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

2.25V

Transistor Element Material :

SILICON GERMANIUM CARBON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Collector Current :

35mA

Max Collector Current :

35mA

JESD-609 Code :

e3

Gain :

35dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

85000MHz

Published :

2012

Emitter Base Voltage (VEBO) :

2.6V

Collector Base Voltage (VCBO) :

2.9V

Max Power Dissipation :

75mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10mA 1.8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Number of Pins :

4

Max Breakdown Voltage :

2.6V

Power Dissipation :

75mW

Package / Case :

SC-82A, SOT-343

Number of Terminations :

4

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

2.6V

Lead Free :

Lead Free

Base Part Number :

BFP840

Mount :

Surface Mount

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transistor Type :

NPN

Number of Elements :

1

Frequency :

85GHz

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

0.75dB @ 5.5GHz