BFP840ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Weight :

6.406992mg

Element Configuration :

Single

Number of Elements :

1

Emitter Base Voltage (VEBO) :

2.9V

Base Part Number :

BFP840

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10mA 1.8V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Length :

2mm

Collector Base Voltage (VCBO) :

2.9V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

4

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Published :

2013

Additional Feature :

LOW NOISE

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Gain :

18.5dB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

2.25V

Collector Emitter Voltage (VCEO) :

2.25V

Max Collector Current :

35mA

Continuous Collector Current :

35mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.25mm

Transistor Type :

NPN

Package / Case :

SC-82A, SOT-343

Height :

800μm

Power Dissipation :

75mW

Terminal Form :

Gull wing

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Max Power Dissipation :

75mW

Noise Figure (dB Typ @ f) :

0.85dB @ 5.5GHz

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Transition Frequency :

80MHz

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

2.25V

ECCN Code :

EAR99

Contact Plating :

Tin

Frequency :

80GHz