BFG25A/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

TO-253-4, TO-253AA

Transistor Type :

NPN

Case Connection :

COLLECTOR

Published :

1997

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500μA 1V

Number of Elements :

1

Surface Mount :

yes

Current - Collector (Ic) (Max) :

6.5mA

Frequency - Transition :

5GHz

Collector-Base Capacitance-Max :

0.3pF

Configuration :

Single

Base Part Number :

BFG25

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power - Max :

32mW

Polarity/Channel Type :

NPN

Operating Temperature :

175°C TJ

Voltage - Collector Emitter Breakdown (Max) :

5V

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Noise Figure (dB Typ @ f) :

1.8dB ~ 2dB @ 1GHz

Pin Count :

4

Number of Terminations :

4

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transition Frequency :

5000MHz

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

L B