BFG21W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 2V

HTS Code :

8541.21.00.75

JESD-30 Code :

R-PDSO-G4

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Published :

1998

Transition Frequency :

18000MHz

Pin Count :

4

Number of Elements :

1

Current - Collector (Ic) (Max) :

500mA

Terminal Form :

Gull wing

Configuration :

Single

Operating Temperature :

150°C TJ

Collector-Base Capacitance-Max :

3pF

ECCN Code :

EAR99

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Surface Mount :

yes

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

600mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

0.67W

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Base Part Number :

BFG21

Packaging :

Tape and Reel (TR)

Package / Case :

SC-82A, SOT-343

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Terminations :

4

Case Connection :

Emitter

Frequency - Transition :

18GHz