BDX54C
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- Mfr.Part #
- BDX54C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO220
- Stock
- 6,113
- In Stock ：
- 6,113
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -100V
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Power Dissipation :
- 60W
- Height :
- 9.15mm
- Continuous Collector Current :
- 8A
- Contact Plating :
- Tin
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- PNP - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -8A
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Transition Frequency :
- 20MHz
- Length :
- 10.4mm
- Radiation Hardening :
- No
- Width :
- 4.6mm
- Base Part Number :
- BDX54
- Number of Terminations :
- 3
- Polarity :
- PNP
- Max Power Dissipation :
- 60W
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 500μA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- VCEsat-Max :
- 2 V
- Number of Elements :
- 1
- hFE Min :
- 750
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- BDX54C
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX54C Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 12mA, 3A.Continuous collector voltages of 8A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 20MHz.During maximum operation, collector current can be as low as 8A volts.
BDX54C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 20MHz
BDX54C Applications
There are a lot of STMicroelectronics
BDX54C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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