BDX54C
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- Mfr.Part #
- BDX54C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO220
- Stock
- 6,113
- In Stock ：
- 6,113
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transition Frequency :
- 20MHz
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- VCEsat-Max :
- 2 V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 8A
- Number of Elements :
- 1
- Current Rating :
- -8A
- Radiation Hardening :
- No
- Polarity :
- PNP
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 8A
- Transistor Type :
- PNP - Darlington
- Length :
- 10.4mm
- Max Power Dissipation :
- 60W
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 2V
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 9.15mm
- Width :
- 4.6mm
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Voltage - Rated DC :
- -100V
- Power Dissipation :
- 60W
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- hFE Min :
- 750
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BDX54
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Datasheets
- BDX54C
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX54C Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 12mA, 3A.Continuous collector voltages of 8A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 20MHz.During maximum operation, collector current can be as low as 8A volts.
BDX54C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 20MHz
BDX54C Applications
There are a lot of STMicroelectronics
BDX54C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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