BCW70,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

6.35mm

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

Max Repetitive Reverse Voltage (Vrrm) :

250V

Weight :

4.535924g

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Max Forward Surge Current (Ifsm) :

9A

Forward Voltage :

1.25V

Forward Current :

250mA

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

BCW70

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Collector Emitter Voltage (VCEO) :

45V

Collector Emitter Breakdown Voltage :

45V

Width :

6.35mm

Length :

6.35mm

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Transistor Type :

PNP

Max Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

Power Dissipation :

250mW

Transition Frequency :

100MHz

Terminal Form :

Gull wing

Number of Elements :

1

Max Power Dissipation :

250mW

REACH SVHC :

No SVHC

Element Configuration :

Single

Series :

Automotive, AEC-Q101

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Published :

2009

Frequency :

100MHz

Factory Lead Time :

4 Weeks

Pin Count :

3