BCW72,235
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- Mfr.Part #
- BCW72,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BCW72 - SMALL SIGNAL BI
- Stock
- 9,965
- In Stock ：
- 9,965
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BCW72
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 250mW
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- 150°C TJ
- Datasheets
- BCW72,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW72,235 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 2.5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BCW72,235 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW72,235 Applications
There are a lot of Nexperia USA Inc.
BCW72,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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