BCW70,235
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- Mfr.Part #
- BCW70,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 34,983
- In Stock ：
- 34,983
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100mA
- Transistor Type :
- PNP
- Max Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Base Part Number :
- BCW70
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- hFE Min :
- 215
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 250mW
- Datasheets
- BCW70,235
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70,235 Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70,235 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW70,235 Applications
There are a lot of Nexperia USA Inc.
BCW70,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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