BCW70LT1
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- Mfr.Part #
- BCW70LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 44,713
- In Stock ：
- 44,713
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- hFE Min :
- 215
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Base Part Number :
- BCW70
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 45V
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- -100mA
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- PNP
- Width :
- 1.3mm
- Published :
- 2006
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Power - Max :
- 225mW
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -300mV
- Max Power Dissipation :
- 225mW
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 940μm
- Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Length :
- 2.9mm
- Datasheets
- BCW70LT1
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70LT1G Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70LT1G Features
the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCW70LT1G Applications
There are a lot of ON Semiconductor
BCW70LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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