BCW70LT1G
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- Mfr.Part #
- BCW70LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 5,322
- In Stock ：
- 5,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Published :
- 2006
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 45V
- Current Rating :
- -100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BCW70
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 225mW
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -300mV
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Length :
- 2.9mm
- Contact Plating :
- Tin
- Height :
- 940μm
- Terminal Form :
- Gull wing
- Width :
- 1.3mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- -45V
- hFE Min :
- 215
- Max Power Dissipation :
- 225mW
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Datasheets
- BCW70LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70LT1G Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70LT1G Features
the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCW70LT1G Applications
There are a lot of ON Semiconductor
BCW70LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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