BC858CDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2005

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Number of Elements :

2

Transition Frequency :

100MHz

RoHS Status :

RoHS Compliant

Max Power Dissipation :

500mW

Pin Count :

6

Collector Emitter Saturation Voltage :

-650mV

Current - Collector (Ic) (Max) :

100mA

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

-30V

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

650mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

-30V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Package / Case :

SOT-563, SOT-666

Current - Collector Cutoff (Max) :

15nA ICBO

Surface Mount :

yes

Gain Bandwidth Product :

100MHz

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Terminal Form :

Flat

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

hFE Min :

270

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

2 PNP (Dual)

Number of Terminations :

6

Base Part Number :

BC858CDXV6

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Current Rating :

-100mA