BC858CDXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Published :

2005

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Current Rating :

-100mA

Pin Count :

6

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Collector Emitter Breakdown Voltage :

30V

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

15nA ICBO

Terminal Form :

Flat

Number of Elements :

2

Collector Emitter Saturation Voltage :

-650mV

Collector Emitter Voltage (VCEO) :

650mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Number of Pins :

6

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Polarity :

PNP

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

-30V

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

BC858CDXV6

Transition Frequency :

100MHz

Voltage - Rated DC :

-30V

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Current - Collector (Ic) (Max) :

100mA

Max Power Dissipation :

500mW

Package / Case :

SOT-563, SOT-666

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

270