BC858CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Collector Base Voltage (VCBO) :

-30V

Transition Frequency :

100MHz

Mount :

Surface Mount

Terminal Form :

Gull wing

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Packaging :

Tape and Reel (TR)

Transistor Type :

2 PNP (Dual)

Max Power Dissipation :

380mW

Element Configuration :

Dual

hFE Min :

420

Terminal Finish :

Tin (Sn)

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Max Collector Current :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Current Rating :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-30V

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

650mV

Number of Pins :

6

Collector Emitter Breakdown Voltage :

30V

Gain Bandwidth Product :

100MHz

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Saturation Voltage :

-650mV

Published :

2005

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

100mA

Emitter Base Voltage (VEBO) :

5V

Polarity :

PNP

Transistor Element Material :

SILICON

Number of Terminations :

6