BC858CDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

2 PNP (Dual)

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

240

Pin Count :

6

Current Rating :

-100mA

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

650mV

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

100MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Emitter Base Voltage (VEBO) :

5V

Reach Compliance Code :

not_compliant

Max Power Dissipation :

380mW

Terminal Form :

Gull wing

hFE Min :

420

Number of Elements :

2

Collector Base Voltage (VCBO) :

-30V

Published :

2005

Pbfree Code :

No

Mount :

Surface Mount

Number of Pins :

6

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Transition Frequency :

100MHz

Number of Terminations :

6

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Lead Free :

Contains Lead

Collector Emitter Breakdown Voltage :

30V

Collector Emitter Saturation Voltage :

-650mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Current - Collector (Ic) (Max) :

100mA

Voltage - Rated DC :

-30V

Element Configuration :

Dual