BC858BT116
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- Mfr.Part #
- BC858BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SST3
- Stock
- 1,685
- In Stock ：
- 1,685
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector-Base Capacitance-Max :
- 5pF
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Elements :
- 1
- Max Power Dissipation :
- 350mW
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Breakdown Voltage :
- 30V
- Power - Max :
- 350mW
- Max Collector Current :
- 100mA
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Terminal Finish :
- TIN SILVER COPPER
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 250MHz
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Silver, Tin
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -100mA
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -30V
- Pbfree Code :
- yes
- Published :
- 2014
- Base Part Number :
- BC85*
- Time@Peak Reflow Temperature-Max (s) :
- 10
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 650mV
- Collector Emitter Saturation Voltage :
- -650mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Continuous Collector Current :
- -100mA
- Max Breakdown Voltage :
- 30V
- hFE Min :
- 210
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.75
- Datasheets
- BC858BT116
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BT116 Overview
In this device, the DC current gain is 210 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC858BT116 Features
the DC current gain for this device is 210 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BT116 Applications
There are a lot of ROHM Semiconductor
BC858BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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