BC858BE6433HTMA1

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Mfr.Part #
BC858BE6433HTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 0.1A SOT23
Stock
9,308
In Stock :
9,308

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Transition Frequency :
250MHz
Current - Collector Cutoff (Max) :
15nA ICBO
JESD-30 Code :
R-PDSO-G3
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
100mA
Terminal Form :
Gull wing
Surface Mount :
yes
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Qualification Status :
Not Qualified
Transistor Type :
PNP
Frequency - Transition :
250MHz
Number of Terminations :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Published :
2008
Configuration :
Single
Base Part Number :
BC858
Polarity/Channel Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Power - Max :
330mW
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Voltage - Collector Emitter Breakdown (Max) :
30V
Terminal Position :
Dual
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
BC858BE6433HTMA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BC858BE6433HTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:BC858, Operating Temperature:150°C TJ, BC858BE6433HTMA1 pinout, BC858BE6433HTMA1 datasheet PDF, BC858BE6433HTMA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BC858BE6433HTMA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BC858BE6433HTMA1


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC858BE6433HTMA1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 250MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

BC858BE6433HTMA1 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz


BC858BE6433HTMA1 Applications


There are a lot of Infineon Technologies
BC858BE6433HTMA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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