BC857S

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-30 Code :

R-PDSO-G6

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Power Dissipation-Max (Abs) :

0.3W

Surface Mount :

yes

Power - Max :

300mW

Voltage - Collector Emitter Breakdown (Max) :

45V

Pbfree Code :

yes

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA 5V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

Current - Collector Cutoff (Max) :

15nA ICBO

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Transition Frequency :

200MHz

Current - Collector (Ic) (Max) :

200mA

Terminal Finish :

Matte Tin (Sn)

Published :

2007

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Configuration :

SEPARATE, 2 ELEMENTS

Factory Lead Time :

16 Weeks

Transistor Type :

2 PNP (Dual)

Pin Count :

6

Number of Terminations :

6

Frequency - Transition :

200MHz

Number of Elements :

2