BC857CWH6327XTSA1
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- Mfr.Part #
- BC857CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 10,116
- In Stock ：
- 10,116
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Width :
- 1.25mm
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Length :
- 2mm
- Element Configuration :
- Single
- Max Power Dissipation :
- 250mW
- Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 650mV
- Factory Lead Time :
- 6 Weeks
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC857
- Transistor Element Material :
- SILICON
- Height :
- 800μm
- Terminal Form :
- Gull wing
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 50V
- Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector (Ic) (Max) :
- 100mA
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Datasheets
- BC857CWH6327XTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857CWH6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC857CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC857CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC857CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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