BC857CDW1T1
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- Mfr.Part #
- BC857CDW1T1
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2PNP 45V 0.1A SOT363
- Stock
- 16,456
- In Stock ：
- 16,456
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Base Part Number :
- BC857CD
- Contact Plating :
- Tin
- Height :
- 1.1mm
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -650mV
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- hFE Min :
- 420
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Length :
- 2.2mm
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -45V
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 380mW
- Number of Terminations :
- 6
- Current Rating :
- -100mA
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Published :
- 2009
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Dual
- Frequency :
- 100MHz
- Max Power Dissipation :
- 380mW
- Width :
- 1.35mm
- Transition Frequency :
- 100MHz
- Transistor Type :
- 2 PNP (Dual)
- Radiation Hardening :
- No
- Datasheets
- BC857CDW1T1
BC857CDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at
The BC857CDW1T1G is a PNP Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed for use in general purpose switching and amplification applications. It has a maximum collector-emitter voltage of -45V, a maximum frequency of 100MHz, a maximum power dissipation of 380mW, a maximum collector current of -100mA, and a maximum DC current gain of 270.
Features:
• PNP Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage: -45V
• Maximum Frequency: 100MHz
• Maximum Power Dissipation: 380mW
• Maximum Collector Current: -100mA
• Maximum DC Current Gain: 270
Applications:
• General purpose switching and amplification
• Audio amplifiers
• Motor control
• Power management
• Automotive applications
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