BC857BV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

BC857BV

Pin Count :

6

Factory Lead Time :

15 Weeks

Qualification Status :

Not Qualified

Power Dissipation :

150mW

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

100mA

Peak Reflow Temperature (Cel) :

260

hFE Min :

220

Collector Base Voltage (VCBO) :

-50V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

15nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

-45V

Additional Feature :

High Reliability

Number of Elements :

2

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Polarity :

PNP

Element Configuration :

Dual

Mount :

Surface Mount

Weight :

3.005049mg

Length :

1.6mm

Number of Terminations :

6

Number of Pins :

6

Max Power Dissipation :

150mW

REACH SVHC :

No SVHC

Published :

2007

Pbfree Code :

yes

Terminal Form :

Flat

Max Breakdown Voltage :

45V

Contact Plating :

Tin

Width :

1.2mm

Max Collector Current :

-100mA

Collector Emitter Saturation Voltage :

-400mV

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Height :

600μm

Transistor Type :

2 PNP (Dual)

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Collector Emitter Breakdown Voltage :

-45V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Gain Bandwidth Product :

100MHz