BC857BV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.2mm

Weight :

3.005049mg

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Height :

600μm

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Max Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Max Junction Temperature (Tj) :

150°C

Number of Elements :

2

Terminal Form :

Flat

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

-45V

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

-50V

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Number of Terminations :

6

Factory Lead Time :

15 Weeks

Current - Collector (Ic) (Max) :

100mA

Length :

1.6mm

Current - Collector Cutoff (Max) :

15nA ICBO

Power Dissipation :

150mW

Polarity :

PNP

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Published :

2007

Collector Emitter Saturation Voltage :

-400mV

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

-45V

Base Part Number :

BC857BV

Max Collector Current :

-100mA

Pin Count :

6

Transistor Type :

2 PNP (Dual)

Gain Bandwidth Product :

100MHz

Package / Case :

SOT-563, SOT-666

Additional Feature :

High Reliability

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

hFE Min :

220

Pbfree Code :

yes

Frequency :

100MHz

JESD-609 Code :

e3

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)