BC857BV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

220

Collector Base Voltage (VCBO) :

-50V

Number of Terminations :

6

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

-45V

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

100MHz

Published :

2007

Width :

1.2mm

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Additional Feature :

High Reliability

Weight :

3.005049mg

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

150mW

Max Collector Current :

-100mA

Transistor Type :

2 PNP (Dual)

Pin Count :

6

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Polarity :

PNP

Factory Lead Time :

15 Weeks

Length :

1.6mm

Collector Emitter Voltage (VCEO) :

-45V

Height :

600μm

Pbfree Code :

yes

Number of Elements :

2

Frequency :

100MHz

ECCN Code :

EAR99

Max Breakdown Voltage :

45V

Power Dissipation :

150mW

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Qualification Status :

Not Qualified

Current - Collector Cutoff (Max) :

15nA ICBO

Transition Frequency :

100MHz

Base Part Number :

BC857BV

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

-400mV

Current - Collector (Ic) (Max) :

100mA