BC856S

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Published :

2005

Collector Emitter Breakdown Voltage :

65V

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

4 Weeks

Max Power Dissipation :

400mW

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

300mV

Transition Frequency :

100MHz

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

15nA ICBO

Base Part Number :

BC856S

Contact Plating :

Tin

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Frequency - Transition :

100MHz

Pin Count :

6

Collector Base Voltage (VCBO) :

80V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Power - Max :

400mW

Series :

Automotive, AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G6

Transistor Element Material :

SILICON