BC856S

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

65V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

400mW

Frequency - Transition :

100MHz

Power - Max :

400mW

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2005

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Transition Frequency :

100MHz

Number of Terminations :

6

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Pin Count :

6

Factory Lead Time :

4 Weeks

Base Part Number :

BC856S

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

300mV

Polarity/Channel Type :

PNP

Transistor Type :

2 PNP (Dual)

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS

Collector Base Voltage (VCBO) :

80V

Number of Elements :

2

Series :

Automotive, AEC-Q101

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

15nA ICBO

Mount :

Surface Mount