BC856BWE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Subcategory :

Other Transistors

Number of Terminals :

3

Manufacturer :

Infineon Technologies AG

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.25 W

Current - Collector Cutoff (Max) :

15nA (ICBO)

Frequency - Transition :

250MHz

Qualification Status :

Not Qualified

Supplier Device Package :

PG-SOT323-3-1

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA, 5V

Product Status :

Active

Polarity/Channel Type :

PNP

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

65 V

Number of Elements :

1

Package Shape :

RECTANGULAR

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Terminal Position :

Dual

Operating Temperature :

150°C (TJ)

Transistor Type :

PNP

Transistor Application :

SWITCHING

Collector-Emitter Voltage-Max :

65 V

Collector Current-Max (IC) :

0.1 A

JESD-609 Code :

e3

Configuration :

Single

Current - Collector (Ic) (Max) :

100 mA

Power - Max :

330 mW

DC Current Gain-Min (hFE) :

220

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G3

Package :

Bulk

Terminal Form :

Gull wing