BC856BDW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Published :

2005

Voltage - Rated DC :

-65V

Max Collector Current :

100mA

Surface Mount :

yes

JESD-609 Code :

e3

Transition Frequency :

100MHz

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

-5V

Number of Pins :

6

Factory Lead Time :

8 Weeks

Width :

1.25mm

Number of Terminations :

6

Lead Free :

Lead Free

Frequency :

100MHz

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Current Rating :

-100mA

Max Breakdown Voltage :

65V

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Max Power Dissipation :

380mW

Transistor Application :

AMPLIFIER

Pin Count :

6

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

80V

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Element Material :

SILICON

hFE Min :

220

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-650mV

Height :

950μm

Polarity :

PNP

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

65V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

380mW

Length :

2.08mm

Collector Emitter Breakdown Voltage :

65V