BC856AW,135
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- Mfr.Part #
- BC856AW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC856AW - SMALL SIGNAL
- Stock
- 18,296
- In Stock ：
- 18,296
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 65V
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- BC856
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Qualification Status :
- Not Qualified
- Collector-Base Capacitance-Max :
- 5pF
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Power Dissipation :
- 200mW
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Datasheets
- BC856AW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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