BC856AS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Element Configuration :

Dual

Transistor Type :

2 PNP (Dual)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Contact Plating :

Tin

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA 5V

Number of Terminations :

6

Number of Elements :

2

Polarity :

PNP

Max Collector Current :

100mA

Max Breakdown Voltage :

65V

Width :

1.35mm

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

80V

Pbfree Code :

yes

Max Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

15 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Lead Free :

Lead Free

Height :

1mm

Current - Collector Cutoff (Max) :

15nA

Published :

2007

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

-250mV

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Power Dissipation :

200mW

Weight :

6.010099mg

REACH SVHC :

No SVHC

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

BC856AS

Collector Emitter Breakdown Voltage :

65V

Number of Pins :

6

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Length :

2.2mm

hFE Min :

125

Collector Emitter Voltage (VCEO) :

65V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA