BC850CLT1
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- Mfr.Part #
- BC850CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 3,401
- In Stock ：
- 3,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 45V
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Pin Count :
- 3
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC850*L
- Packaging :
- Cut Tape (CT)
- hFE Min :
- 420
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 225mW
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- ECCN Code :
- EAR99
- Current Rating :
- 100mA
- Width :
- 1.3mm
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Polarity/Channel Type :
- NPN
- Height :
- 940μm
- Max Breakdown Voltage :
- 45V
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC850CLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC850CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC850CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850CLT1G Applications
There are a lot of ON Semiconductor
BC850CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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