BC847BW

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Current-Max (IC) :

0.1 A

Surface Mount :

yes

Min Operating Temperature :

-65 °C

Polarity :

NPN

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150 °C

Transistor Element Material :

SILICON

Power Dissipation :

200 mW

Max Collector Current :

100 mA

Number of Terminals :

3

Max Power Dissipation :

200 mW

Pin Count :

3

Collector Emitter Breakdown Voltage :

45 V

Number of Pins :

3

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Collector-Emitter Voltage-Max :

45 V

Reach Compliance Code :

Compliant

Number of Elements :

1

REACH SVHC :

No SVHC

DC Current Gain-Min (hFE) :

200

Collector Emitter Saturation Voltage :

200 mV

Polarity/Channel Type :

NPN

Ambient Temperature Range High :

150 °C

Emitter Base Voltage (VEBO) :

6 V

Collector Emitter Voltage (VCEO) :

45 V

Max Operating Temperature :

150 °C

Transition Frequency :

100 MHz

Terminal Position :

Dual

Configuration :

Single

hFE Min :

110

Subcategory :

Other Transistors

Collector Base Voltage (VCBO) :

50 V

RoHS :

Compliant

Peak Reflow Temperature (Cel) :

260

Manufacturer :

Diotec Semiconductor AG

Height :

1.1 mm

Package Shape :

RECTANGULAR