AUIRGP35B60PD-E

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Published :

2011

Additional Feature :

High Reliability

Gate-Emitter Voltage-Max :

20V

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

600V

IGBT Type :

NPT

Turn Off Time-Nom (toff) :

142 ns

Max Power Dissipation :

308W

Vce(on) (Max) @ Vge, Ic :

2.55V @ 15V, 35A

Fall Time-Max (tf) :

16ns

Element Configuration :

Single

JEDEC-95 Code :

TO-247AD

Length :

15.87mm

Factory Lead Time :

14 Weeks

Gate-Emitter Thr Voltage-Max :

5V

Gate Charge :

55nC

Number of Pins :

3

Test Condition :

390V, 22A, 3.3 Ω, 15V

Packaging :

Tube

Switching Energy :

220μJ (on), 215μJ (off)

Number of Terminations :

3

Lead Free :

Lead Free

Max Collector Current :

60A

Collector Emitter Voltage (VCEO) :

2.55V

Height :

20.7mm

Turn On Time :

34 ns

RoHS Status :

RoHS Compliant

Power Dissipation :

308W

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Input Type :

Standard

Mount :

Through Hole

Mounting Type :

Through Hole

Number of Elements :

1

ECCN Code :

EAR99

Width :

5.31mm

Transistor Element Material :

SILICON

Reverse Recovery Time :

42 ns

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

26ns/110ns

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

2.15V

Current - Collector Pulsed (Icm) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time-Max :

11ns

Package / Case :

TO-247-3