AT-32011-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Noise Figure (dB Typ @ f) :

1dB ~ 1.3dB @ 900MHz

Additional Feature :

HIGH RELIABILITY, LOW NOISE

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2mA 2.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200mW

ECCN Code :

EAR99

Number of Pins :

4

Configuration :

Single

Transistor Element Material :

SILICON

Continuous Collector Current :

32mA

Terminal Form :

Gull wing

Gain Bandwidth Product :

10 GHz

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Contact Plating :

Gold

Gain :

12.5dB ~ 14dB

Voltage - Rated DC :

5.5V

Published :

2009

Max Power Dissipation :

200mW

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Frequency :

30GHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Max Collector Current :

32mA

Qualification Status :

Not Qualified

Package / Case :

TO-253-4, TO-253AA

Case Connection :

COLLECTOR

Current Rating :

32mA

Collector Emitter Voltage (VCEO) :

5.5V

Terminal Position :

Dual

Base Part Number :

AT32011

Emitter Base Voltage (VEBO) :

1.5V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

4

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Collector Base Voltage (VCBO) :

11V

Collector Emitter Breakdown Voltage :

5.5V