AT-30511-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Base Voltage (VCBO) :

11V

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 1mA 2.7V

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

Current Rating :

8mA

Noise Figure (dB Typ @ f) :

1.1dB ~ 1.4dB @ 900MHz

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

10 GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Contact Plating :

Gold

Additional Feature :

High Reliability

Package / Case :

TO-253-4, TO-253AA

Number of Pins :

4

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Emitter Base Voltage (VEBO) :

1.5V

Voltage - Rated DC :

5.5V

Terminal Finish :

Matte Tin (Sn)

Published :

2005

Power Dissipation :

100mW

Collector Emitter Voltage (VCEO) :

5.5V

Max Collector Current :

8mA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Continuous Collector Current :

8mA

Gain :

14dB ~ 16dB

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

5.5V

Frequency :

30GHz

Mount :

Surface Mount

Max Power Dissipation :

100mW

Number of Terminations :

4

Case Connection :

COLLECTOR

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount