AT-30511-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

5.5V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

1.1dB ~ 1.4dB @ 900MHz

Number of Elements :

1

Case Connection :

COLLECTOR

Current Rating :

8mA

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

1.5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 1mA 2.7V

Number of Terminations :

4

Transistor Type :

NPN

Gain Bandwidth Product :

10 GHz

Configuration :

Single

Collector Emitter Breakdown Voltage :

5.5V

Factory Lead Time :

6 Weeks

Polarity/Channel Type :

NPN

Voltage - Rated DC :

5.5V

Terminal Form :

Gull wing

Power Dissipation :

100mW

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Contact Plating :

Gold

Max Power Dissipation :

100mW

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Published :

2005

Max Collector Current :

8mA

Packaging :

Tape and Reel (TR)

Gain :

14dB ~ 16dB

Package / Case :

TO-253-4, TO-253AA

Continuous Collector Current :

8mA

Terminal Position :

Dual

Frequency :

30GHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

11V

Number of Pins :

4

RoHS Status :

RoHS Compliant

Additional Feature :

High Reliability