AT-30533-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

100mW

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

5.5V

Emitter Base Voltage (VEBO) :

1.5V

Mount :

Surface Mount

Transistor Type :

NPN

Power Dissipation :

100mW

Number of Pins :

3

Element Configuration :

Single

Gain Bandwidth Product :

10 GHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Voltage - Rated DC :

5.5V

Collector Emitter Breakdown Voltage :

5.5V

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Current Rating :

8mA

Noise Figure (dB Typ @ f) :

1.1dB ~ 1.4dB @ 900MHz

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Operating Temperature :

150°C TJ

Published :

2005

Collector Base Voltage (VCBO) :

11V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Gain :

11dB ~ 13dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Form :

Gull wing

Contact Plating :

Gold

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Frequency :

30GHz

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 1mA 2.7V

Qualification Status :

Not Qualified

Factory Lead Time :

6 Weeks

Continuous Collector Current :

8mA

Max Collector Current :

8mA