AT-32011-BLKG

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

200mW

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2mA 2.7V

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

NPN

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1dB ~ 1.3dB @ 900MHz

JESD-609 Code :

e3

Configuration :

Single

JESD-30 Code :

R-PDSO-G4

Gain :

12.5dB ~ 14dB

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.2W

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

5.5V

Case Connection :

COLLECTOR

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Number of Terminations :

4

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Reach Compliance Code :

Compliant

Current - Collector (Ic) (Max) :

32mA

Package / Case :

TO-253-4, TO-253AA

ECCN Code :

EAR99

Transistor Type :

NPN

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Number of Elements :

1

Base Part Number :

AT32011