APT68GA60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-247AD

Max Collector Current :

121A

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

600V

Turn On Time :

46 ns

Gate Charge :

298nC

JESD-30 Code :

R-PSFM-T3

Current - Collector Pulsed (Icm) :

202A

Package / Case :

TO-247-3

Max Power Dissipation :

520W

Gate-Emitter Thr Voltage-Max :

6V

Factory Lead Time :

6 Weeks

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

IGBT Type :

PT

Mounting Type :

Through Hole

Input Type :

Standard

RoHS Status :

RoHS Compliant

Td (on/off) @ 25°C :

21ns/133ns

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

304 ns

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Pin Count :

3

Power - Max :

520W

Number of Elements :

1

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

600V

Test Condition :

400V, 40A, 4.7 Ω, 15V

Number of Terminations :

3

Terminal Finish :

PURE MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Mount :

Through Hole

Gate-Emitter Voltage-Max :

30V

Switching Energy :

715μJ (on), 607μJ (off)

Series :

POWER MOS 8™

Additional Feature :

LOW CONDUCTION LOSS