APT6017B2LLG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

500W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

170m Ω @ 17.5A, 10V

Published :

1997

Power Dissipation :

500W

Voltage - Rated DC :

600V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

POWER MOS 7®

Transistor Element Material :

SILICON

Mount :

Through Hole

Number of Elements :

1

FET Type :

N-Channel

Number of Terminations :

3

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Pbfree Code :

yes

Terminal Position :

Single

Fall Time (Typ) :

6 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

35A

Case Connection :

DRAIN

Vgs (Max) :

±30V

Packaging :

Tube

Pin Count :

3

Turn-Off Delay Time :

26 ns

Mounting Type :

Through Hole

Package / Case :

TO-247-3 Variant

Current Rating :

35A

Rise Time :

7ns