APT65GP60B2G
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- Mfr.Part #
- APT65GP60B2G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- IGBT 600V 100A 833W TMAX
- Stock
- 119
- In Stock ：
- 119
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 210nC
- Radiation Hardening :
- No
- IGBT Type :
- PT
- Published :
- 1999
- Terminal Finish :
- TIN SILVER COPPER
- Switching Energy :
- 605μJ (on), 896μJ (off)
- Transistor Application :
- POWER CONTROL
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 600V
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Td (on/off) @ 25°C :
- 30ns/91ns
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Turn Off Time-Nom (toff) :
- 219 ns
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Input Type :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Collector Current :
- 100A
- Pin Count :
- 3
- Voltage - Rated DC :
- 600V
- Series :
- POWER MOS 7®
- Turn On Time :
- 84 ns
- RoHS Status :
- RoHS Compliant
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Element Configuration :
- Single
- Max Power Dissipation :
- 833W
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 65A
- Current Rating :
- 100A
- Additional Feature :
- LOW CONDUCTION LOSS
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3 Variant
- Test Condition :
- 400V, 65A, 5 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 250A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- APT65GP60B2G
APT65GP60B2G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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