APT64GA90B2D30

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Power - Max :

500W

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 38A

Max Power Dissipation :

500W

Case Connection :

COLLECTOR

Test Condition :

600V, 38A, 4.7 Ω, 15V

Series :

POWER MOS 8™

JEDEC-95 Code :

TO-247AD

Turn On Time :

44 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

29 Weeks

Gate Charge :

162nC

Current - Collector Pulsed (Icm) :

193A

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-609 Code :

e1

Switching Energy :

1192μJ (on), 1088μJ (off)

Element Configuration :

Single

Pin Count :

3

Max Collector Current :

117A

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

18ns/131ns

Collector Emitter Voltage (VCEO) :

900V

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

352 ns

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

900V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Input Type :

Standard

Additional Feature :

LOW CONDUCTION LOSS

IGBT Type :

PT

Transistor Application :

POWER CONTROL

Packaging :

Tube

Package / Case :

TO-247-3 Variant