APT50GT120B2RDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Gate Charge :

240nC

IGBT Type :

NPT

Td (on/off) @ 25°C :

23ns/215ns

Switching Energy :

3585μJ (on), 1910μJ (off)

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

1.2kV

Power - Max :

694W

Turn On Time :

73 ns

Mount :

Through Hole

JESD-609 Code :

e1

Max Collector Current :

106A

Pbfree Code :

yes

Transistor Element Material :

SILICON

Input Type :

Standard

Turn Off Time-Nom (toff) :

305 ns

Published :

1999

Additional Feature :

LOW CONDUCTION LOSS

Package / Case :

TO-247-3 Variant

JEDEC-95 Code :

TO-247AD

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

Max Power Dissipation :

694W

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

1200V

Current - Collector Pulsed (Icm) :

150A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

Number of Terminations :

3

Packaging :

Tube

Collector Emitter Breakdown Voltage :

1.2kV

Pin Count :

3

Case Connection :

COLLECTOR

Test Condition :

800V, 50A, 4.7 Ω, 15V

Series :

Thunderbolt IGBT®

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Transistor Application :

Motor Control