APT5010B2LLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

520W

Package / Case :

TO-247-3 Variant

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 25V

Rds On (Max) @ Id, Vgs :

100m Ω @ 23A, 10V

Turn-Off Delay Time :

25 ns

Number of Pins :

3

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Rise Time :

15ns

Continuous Drain Current (ID) :

46A

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Voltage - Rated DC :

500V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max :

520W Tc

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

3 ns

Pin Count :

3

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Published :

1997

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Factory Lead Time :

23 Weeks

Turn On Delay Time :

11 ns

Number of Elements :

1

Terminal Finish :

TIN SILVER COPPER

Series :

POWER MOS 7®

Mounting Type :

Through Hole

Current Rating :

46A