APT50GP60LDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 50A

Published :

1999

Transistor Element Material :

SILICON

Package / Case :

TO-264-3, TO-264AA

Switching Energy :

456μJ (on), 635μJ (off)

Test Condition :

400V, 50A, 4.3 Ω, 15V

Pin Count :

3

ECCN Code :

EAR99

Max Power Dissipation :

625W

Number of Terminations :

3

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

200 ns

Max Collector Current :

150A

Collector Emitter Breakdown Voltage :

600V

IGBT Type :

PT

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn On Time :

55 ns

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Mount :

Through Hole

Gate Charge :

165nC

Packaging :

Tube

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

190A

Power - Max :

625W

Td (on/off) @ 25°C :

19ns/85ns

Pbfree Code :

yes

Input Type :

Standard

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Transistor Application :

Motor Control

Number of Elements :

1

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

600V