APT50GF120LRG
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- Mfr.Part #
- APT50GF120LRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 1200V 135A 781W TO264
- Stock
- 37
- In Stock ：
- 37
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Operating Temperature :
- -55°C~150°C TJ
- IGBT Type :
- NPT
- Switching Energy :
- 3.6mJ (on), 2.64mJ (off)
- Package / Case :
- TO-264-3, TO-264AA
- Pin Count :
- 3
- Current Rating :
- 156A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Max Power Dissipation :
- 781W
- Current - Collector Pulsed (Icm) :
- 150A
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Transistor Application :
- POWER CONTROL
- Max Collector Current :
- 135A
- Gate-Emitter Voltage-Max :
- 30V
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 25ns/260ns
- Published :
- 2001
- Voltage - Rated DC :
- 1.2kV
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Case Connection :
- COLLECTOR
- Power - Max :
- 781W
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Vce(on) (Max) @ Vge, Ic :
- 3V @ 15V, 50A
- Test Condition :
- 800V, 50A, 1 Ω, 15V
- Turn On Time :
- 106 ns
- Radiation Hardening :
- No
- Terminal Finish :
- TIN SILVER COPPER
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Factory Lead Time :
- 24 Weeks
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Gate Charge :
- 340nC
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Turn Off Time-Nom (toff) :
- 520 ns
- Datasheets
- APT50GF120LRG
APT50GF120LRG datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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