APT33GF120B2RDQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

1.2kV

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 25A

Current Rating :

64A

Collector Emitter Breakdown Voltage :

1.2kV

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3 Variant

Number of Elements :

1

Terminal Finish :

TIN SILVER COPPER

Lead Free :

Lead Free

Voltage - Rated DC :

1.2kV

Switching Energy :

1.315mJ (on), 1.515mJ (off)

Mount :

Through Hole

Number of Terminations :

3

Published :

1999

RoHS Status :

RoHS Compliant

Packaging :

Tube

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Pbfree Code :

yes

Td (on/off) @ 25°C :

14ns/185ns

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

JESD-609 Code :

e1

Number of Pins :

3

Case Connection :

COLLECTOR

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Max Power Dissipation :

357W

Factory Lead Time :

29 Weeks

Turn Off Time-Nom (toff) :

355 ns

Current - Collector Pulsed (Icm) :

75A

Test Condition :

800V, 25A, 4.3 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Turn On Time :

31 ns

Pin Count :

3

Gate Charge :

170nC

IGBT Type :

NPT

Gate-Emitter Thr Voltage-Max :

6.5V

Max Collector Current :

64A

Input Type :

Standard