APT30GP60LDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Turn Off Time-Nom (toff) :

164 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Gate Charge :

90nC

Number of Pins :

3

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Type :

Standard

Mounting Type :

Through Hole

Packaging :

Tube

RoHS Status :

RoHS Compliant

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

400V, 30A, 5 Ω, 15V

Switching Energy :

260μJ (on), 250μJ (off)

Qualification Status :

Not Qualified

Package / Case :

TO-264-3, TO-264AA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Pbfree Code :

yes

Max Power Dissipation :

463W

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

120A

Gate-Emitter Voltage-Max :

20V

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

6V

Transistor Application :

Motor Control

Number of Terminations :

3

Td (on/off) @ 25°C :

13ns/55ns

Published :

1999

Case Connection :

COLLECTOR

JESD-609 Code :

e1

Power - Max :

463W

Turn On Time :

31 ns

Collector Emitter Voltage (VCEO) :

2.7V

Additional Feature :

LOW CONDUCTION LOSS

Max Collector Current :

100A

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

IGBT Type :

PT