APT30GP60LDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Published :

1999

Max Power Dissipation :

463W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

120A

RoHS Status :

RoHS Compliant

Switching Energy :

260μJ (on), 250μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

3

Case Connection :

COLLECTOR

Power - Max :

463W

Transistor Application :

Motor Control

Turn On Time :

31 ns

Input Type :

Standard

Pbfree Code :

yes

Gate-Emitter Thr Voltage-Max :

6V

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

Turn Off Time-Nom (toff) :

164 ns

Package / Case :

TO-264-3, TO-264AA

Test Condition :

400V, 30A, 5 Ω, 15V

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

2.7V

Additional Feature :

LOW CONDUCTION LOSS

Gate-Emitter Voltage-Max :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Td (on/off) @ 25°C :

13ns/55ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge :

90nC

Max Collector Current :

100A

Mount :

Through Hole

IGBT Type :

PT

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Pin Count :

3