APT30GP60LDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Case Connection :

COLLECTOR

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

90nC

Packaging :

Tube

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6V

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

164 ns

RoHS Status :

RoHS Compliant

Pin Count :

3

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Mount :

Through Hole

Td (on/off) @ 25°C :

13ns/55ns

Current - Collector Pulsed (Icm) :

120A

IGBT Type :

PT

Published :

1999

Switching Energy :

260μJ (on), 250μJ (off)

Number of Terminations :

3

Number of Elements :

1

Power - Max :

463W

Collector Emitter Voltage (VCEO) :

2.7V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Collector Current :

100A

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-264-3, TO-264AA

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Turn On Time :

31 ns

Qualification Status :

Not Qualified

Max Power Dissipation :

463W

Additional Feature :

LOW CONDUCTION LOSS

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Application :

Motor Control

Test Condition :

400V, 30A, 5 Ω, 15V